CSD86311W1723 供应商
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CSD86311W1723
品牌：TI 封装/批号：原厂原装/22+ -
CSD86311W1723
品牌：TI 封装/批号：TSSOP/23+
CSD86311W1723 属性参数
- 产品培训模块：NexFET MOSFET Technology
- 视频文件：NexFET Power BlockPowerStack? Packaging Technology Overview
- 标准包装：1
- 类别：分离式半导体产品
- 家庭：FET - 阵列
- 系列：NexFET™
- FET 型：2 个 N 沟道（双）
- FET 特点：逻辑电平门
- 漏极至源极电压(Vdss)：25V
- 电流 - 连续漏极(Id) @ 25° C：4.5A
- 开态Rds（最大）@ Id, Vgs @ 25° C：39 毫欧 @ 2A，8V
- Id 时的 Vgs(th)（最大）：1.4V @ 250µA
- 闸电荷(Qg) @ Vgs：4nC @ 4.5V
- 输入电容 (Ciss) @ Vds：585pF @ 12.5V
- 功率 - 最大：1.5W
- 安装类型：表面贴装
- 封装/外壳：12-UFBGA，DSBGA
- 供应商设备封装：12-DSBGA（2.43x1.96）
- 包装：?
- 其它名称：296-27599-6
产品特性
- Dual N-Ch MOSFETs
- Common Source Configuration
- Small Footprint 1.7 mm × 2.3 mm
- Ultra Low Qg and Qgd
- Pb Free
- RoHS Compliant
- Halogen Free
- APPLICATIONS Battery Management Battery Protection DC-DC Converters
- Battery Management
- Battery Protection
- DC-DC Converters
产品概述
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications