TPS1101D 供应商
TPS1101D 属性参数
- 标准包装：75
- 类别：分离式半导体产品
- 家庭：FET - 单
- 系列：-
- FET 型：MOSFET P 通道，金属氧化物
- FET 特点：逻辑电平门
- 漏极至源极电压(Vdss)：15V
- 电流 - 连续漏极(Id) @ 25° C：2.3A
- 开态Rds（最大）@ Id, Vgs @ 25° C：90 毫欧 @ 2.5A，10V
- Id 时的 Vgs(th)（最大）：1.5V @ 250µA
- 闸电荷(Qg) @ Vgs：11.25nC @ 10V
- 输入电容 (Ciss) @ Vds：-
- 功率 - 最大：791mW
- 安装类型：表面贴装
- 封装/外壳：8-SOIC（0.154"，3.90mm 宽）
- 供应商设备封装：8-SOIC
- 包装：管件
- 其它名称：296-3381-5
产品特性
- Low rDS(on) . . . 0.09 Typ at VGS = -10 V
- 3 V Compatible
- Requires No External VCC
- TTL and CMOS Compatible Inputs
- VGS(th) = -1.5 V Max
- Available in Ultrathin TSSOP Package (PW)
- ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015
产品概述
The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSTM
process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1101 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 5.5 ns typical) of the TPS1101 make it the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.
The ultrathin thin shrink small-outline package or TSSOP (PW) version fits in height-restricted places where other P-channel MOSFETs cannot. The size advantage is especially important where board height restrictions do not allow for an small-outline integrated circuit (SOIC) package. Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other P-channel MOSFETs in SOIC packages.
TPS1101D