SN74LVC3G07MDCUREP 供应商
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SN74LVC3G07MDCUREP
品牌：TI 封装/批号：原厂原装/22+ -
SN74LVC3G07MDCUREP
品牌：TI(德州仪器) 封装/批号：VSSOP-8/2022+ -
SN74LVC3G07MDCUREP
品牌：TI 封装/批号：US8/23+
SN74LVC3G07MDCUREP 属性参数
- 标准包装：1
- 类别：集成电路 (IC)
- 家庭：逻辑 - 缓冲器，驱动器，接收器，收发器
- 系列：74LVC
- 逻辑类型：缓冲器/线路驱动器，非反相并带开漏极
- 元件数：3
- 每个元件的位元数：1
- 输出电流高，低：32mA，32mA
- 电源电压：1.65 V ~ 5.5 V
- 工作温度：-55°C ~ 125°C
- 安装类型：表面贴装
- 封装/外壳：8-VFSOP（0.091"，2.30mm 宽）
- 供应商设备封装：US8
- 包装：®
- 其它名称：296-23953-6
产品特性
- Qualified for Automotive Applications
- Supports 5-V VCC Operation
- Max tpd of 6.7 ns at 3.3 V
- Low Power Consumption, 10-µA Max ICC
- ±24-mA Output Drive at 3.3 V
- Input and Open-Drain Output Accepts Voltages up to 5.5 V
- Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C
- Typical VOHV (Output VOH Undershoot) >2 V at VCC = 3.3 V, TA = 25°C
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Protection Exceeds JESD 22 2000-V Human-Body Model (A114-A) 200-V Machine Model (A115-A) 1000-V Charged-Device Model (C101)
- 2000-V Human-Body Model (A114-A)
- 200-V Machine Model (A115-A)
- 1000-V Charged-Device Model (C101)
- SUPPORTS DEFENSE, AEROSPACE, AND MEDICAL APPLICATIONS Controlled Baseline One Assembly/Test Site One Fabrication Site Available in Military (–55°C/125°C) Temperature Range(1) Extended Product Life Cycle Extended Product-Change Notification Product Traceability
- Controlled Baseline
- One Assembly/Test Site
- One Fabrication Site
- Available in Military (–55°C/125°C) Temperature Range(1)
- Extended Product Life Cycle
- Extended Product-Change Notification
- Product Traceability
产品概述
This triple buffer/driver is designed for 1.65-V to 5.5-V VCC operation.The output of the SN74LVC3G07 is open drain and can be connected to other open-drain outputs to implement active-low wired-OR or active-high wired-AND functions. The maximum sink current is 32 mA.This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.