SN74BCT2827CDW 供应商
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SN74BCT2827CDW
品牌：TI 封装/批号：原厂原装/22+ -
SN74BCT2827CDW
品牌：TI(德州仪器) 封装/批号：SOIC-24/2022+ -
SN74BCT2827CDWR
品牌：TI 封装/批号：/2019+
SN74BCT2827CDW 属性参数
- 标准包装：25
- 类别：集成电路 (IC)
- 家庭：逻辑 - 缓冲器，驱动器，接收器，收发器
- 系列：74BCT
- 逻辑类型：缓冲器/线路驱动器，非反相
- 元件数：1
- 每个元件的位元数：10
- 输出电流高，低：1mA，12mA
- 电源电压：4.5 V ~ 5.5 V
- 工作温度：0°C ~ 70°C
- 安装类型：表面贴装
- 封装/外壳：24-SOIC（0.295"，7.50mm 宽）
- 供应商设备封装：24-SOIC
- 包装：管件
产品特性
- BiCMOS Design Substantially Reduces ICCZ
- Output Ports Have Equivalent 25- Resistors; No External Resistors Are Required
- Specifically Designed to Drive MOS DRAMs
- 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
- Flow-Through Architecture Optimizes PCB Layout
- Power-Up High-Impedance State
- ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
- Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)
产品概述
These 10-bit buffers and bus drivers are specifically designed to
drive the capacitive input characteristics of MOS DRAMs. They provide
high-performance bus interface for wide data paths or buses carrying
parity.The 3-state control gate is a 2-input AND gate with active-low
inputs so if either output-enable ( or ) input is
high, all ten outputs are in the high-impedance state. The outputs
are also in the high-impedance state during power-up and power-down
conditions. The outputs remain in the high-impedance state while the
device is powered down.The SN54BCT2827C is characterized for operation over the full
military temperature range of -55°C to 125°C. The
SN74BCT2827C is characterized for operation from 0°C to
70°C.
SN74BCT2827CDW