SN74ABT861DW 供应商
-
SN74ABT861DW
品牌：TI 封装/批号：原厂原装/22+
SN74ABT861DW 属性参数
- 标准包装：25
- 类别：集成电路 (IC)
- 家庭：逻辑 - 缓冲器，驱动器，接收器，收发器
- 系列：74ABT
- 逻辑类型：收发器，非反相
- 元件数：1
- 每个元件的位元数：10
- 输出电流高，低：32mA，64mA
- 电源电压：4.5 V ~ 5.5 V
- 工作温度：-40°C ~ 85°C
- 安装类型：表面贴装
- 封装/外壳：24-SOIC（0.295"，7.50mm 宽）
- 供应商设备封装：24-SOIC
- 包装：管件
- 其它名称：296-33633-5SN74ABT861DW-ND
产品特性
- State-of-the-Art EPIC-II BTM BiCMOS Design Significantly Reduces Power Dissipation
- ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
- High-Impedance State During Power Up and Power Down
- Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
- High-Drive Outputs (-32-mA IOH, 64-mA IOL)
- Package Options Include Plastic Small-Outline (DW) Package, Ceramic Chip Carriers (FK), and Plastic (NT) and Ceramic (JT) DIPs
产品概述
The 'ABT861 are 10-bit transceivers designed for asynchronous communication between data buses. The control-function implementation allows for maximum flexibility in timing.
These devices allow noninverted data transmission from the A bus to the B bus or from the B bus to the A bus, depending on the logic levels at the output-enable (OEAB\ and OEBA\) inputs.
When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
The SN54ABT861 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT861 is characterized for operation from -40°C to 85°C.
SN74ABT861DW