SN74ABT827DW 供应商
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SN74ABT827DW
品牌：TI 封装/批号：原厂原装/22+ -
SN74ABT827DW
品牌：TI 封装/批号：24SOIC/2019+ -
SN74ABT827DW
品牌：TI(德州仪器) 封装/批号：SOIC-24/2022+
SN74ABT827DW 属性参数
- 标准包装：25
- 类别：集成电路 (IC)
- 家庭：逻辑 - 缓冲器，驱动器，接收器，收发器
- 系列：74ABT
- 逻辑类型：缓冲器/线路驱动器，非反相
- 元件数：1
- 每个元件的位元数：10
- 输出电流高，低：32mA，64mA
- 电源电压：4.5 V ~ 5.5 V
- 工作温度：-40°C ~ 85°C
- 安装类型：表面贴装
- 封装/外壳：24-SOIC（0.295"，7.50mm 宽）
- 供应商设备封装：24-SOIC
- 包装：管件
- 其它名称：296-4095-5
产品特性
- State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
- Flow-Through Architecture Optimizes PCB Layout
- Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
- Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
- High-Impedance State During Power Up and Power Down
- High-Drive Outputs (-32-mA IOH, 64-mA IOL)
- Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), and Plastic (NT) and Ceramic (JT) DIPs
产品概述
These 10-bit buffers or bus drivers provide a high-performance bus interface for wide data paths or buses carrying parity.The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (OE1\ or OE2\) input is high, all ten outputs are in the high-impedance state. The 'ABT827 provide true data at the outputs.When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.The SN54ABT827 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT827 is characterized for operation from -40°C to 85°C.
SN74ABT827DW