EMB1412MYE/NOPB 供应商
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EMB1412MYE/NOPB
品牌：TI 封装/批号：原厂原装/22+ -
EMB1412MYE/NOPB
品牌：TI(德州仪器) 封装/批号：MSOP-8/2022+
EMB1412MYE/NOPB 属性参数
- 现有数量：0现货10,000Factory查看交期
- 价格：250 : ￥33.40040卷带（TR）
- 系列：-
- 包装：卷带（TR）剪切带（CT）? 得捷定制卷带
- 产品状态：在售
- Digi-Key Programmable：Not Verified
- 驱动配置：低端
- 通道类型：单路
- 驱动器数：1
- 栅极类型：IGBT，N 沟道，P 沟道 MOSFET
- 电压 - 供电：3.5V ~ 14V
- 逻辑电压?- VIL，VIH：0.8V，2.3V
- 电流 - 峰值输出（灌入，拉出）：3A，7A
- 输入类型：反相，非反相
- 高压侧电压 - 最大值（自举）：-
- 上升/下降时间（典型值）：14ns，12ns
- 工作温度：-40°C ~ 125°C（TJ）
- 安装类型：表面贴装型
- 封装/外壳：8-PowerTSSOP，8-MSOP（0.118"，3.00mm 宽）
- 供应商器件封装：8-HVSSOP
产品特性
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 7 A Sink/3 A Source Current
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns/12 ns Rise Fall with 2 nF Load)
- Inverting and Non-Inverting Inputs Provide Either Configuration with a Single Device
- Supply Rail Under-Voltage Lockout Protection
- Dedicated Input Ground (IN_REF) for Split Supply or Single Supply Operation
- Thermally Enhanced 8-Pin VSSOP Package
- Output Swings from VCC to VEE Which can be Negative Relative to Input Ground
产品概述
The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead
exposed-pad VSSOP package, with improved power dissipation required for high frequency operation.
The compound output driver stage includes MOS and bipolar transistors operating in parallel that
together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS
and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage
lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on
voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for
inverting and non-inverting gate drive with a single device type.
EMB1412MYE/NOPB 数据手册
EMB1412MYE/NOPB
EMB1412MYE/NOPB 电路图
