IC元器件

CSD17313Q2

参考价格:$0.25245-$0.63

Texas Instruments FET - 单

CSD17313Q2 供应商

CSD17313Q2 属性参数

  • 产品培训模块:NexFET MOSFET Technology
  • 视频文件:NexFET Power BlockPowerStack? Packaging Technology Overview
  • 标准包装:1
  • 类别:分离式半导体产品
  • 家庭:FET - 单
  • 系列:NexFET™
  • FET 型:MOSFET N 通道,金属氧化物
  • FET 特点:逻辑电平门
  • 漏极至源极电压(Vdss):30V
  • 电流 - 连续漏极(Id) @ 25° C:5A
  • 开态Rds(最大)@ Id, Vgs @ 25° C:30 毫欧 @ 4A,8V
  • Id 时的 Vgs(th)(最大):1.8V @ 250µA
  • 闸电荷(Qg) @ Vgs:2.7nC @ 4.5V
  • 输入电容 (Ciss) @ Vds:340pF @ 15V
  • 功率 - 最大:2.3W
  • 安装类型:表面贴装
  • 封装/外壳:6-SMD,扁平引线
  • 供应商设备封装:6-SON
  • 包装:?
  • 其它名称:296-27233-6

产品特性

  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Pb-Free
  • RoHS Compliant
  • Halogen-Free
  • SON 2-mm × 2-mm Plastic Package
  • APPLICATIONS DC-DC Converters Battery and Load Management Applications
  • DC-DC Converters
  • Battery and Load Management Applications

产品概述

This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

CSD17313Q2 电路图