BQ2204ASN-N 供应商
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BQ2204ASN-N
品牌：TI 封装/批号：原厂原装/22+ -
BQ2204ASN-N
品牌：TI 封装/批号：原厂原封装/新批号
BQ2204ASN-N 属性参数
- 标准包装：40
- 类别：集成电路 (IC)
- 家庭：存储器 - 控制器
- 系列：-
- 控制器类型：非易失性 SRAM
- 电源电压：4.5 V ~ 5.5 V
- 工作温度：-40°C ~ 85°C
- 封装/外壳：16-SOIC（0.154"，3.90mm 宽）
- 供应商设备封装：16-SOIC N
- 包装：管件
产品特性
- Power monitoring and switching for 3-volt battery-backup applications
- Write-protect control
- 2-input decoder for control of up to 4 banks of SRAM
- 3-volt primary cell inputs
- Less than 10ns chip-enable propagation delay
- 5% or 10% supply operation
产品概述
The CMOS bq2204A SRAM Non-volatile Controller Unit provides all necessary functions for converting up to four banks of standard CMOS SRAM into nonvolatile read/write memory.
A precision comparator monitors the 5V VCC input for an out-of-tolerance condi-tion. When out-of-tolerance is detected, the four conditioned chip-enable outputs are forced inactive to write-protect up to four banks of SRAM.
During a power failure, the external SRAMs are switched from the VCC supply to one of two 3V backup sup-plies. On a subsequent power-up, the SRAMs are write-protected until a power-valid condition exists.
During power-valid operation, a two-input decoder transparently selects one of up to four banks of SRAM.
BQ2204ASN-N