SN74TVC3010DGVR 供应商
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SN74TVC3010DGVR
品牌:TI 封装/批号:原厂原装/22+ -
SN74TVC3010DGVR
品牌:TI 封装/批号:TSSOP/23+
SN74TVC3010DGVR 属性参数
- 标准包装:1
- 类别:集成电路 (IC)
- 家庭:逻辑 - 专用逻辑
- 系列:-
- 逻辑类型:电压钳
- 电源电压:-
- 位数:10
- 工作温度:-40°C ~ 85°C
- 安装类型:表面贴装
- 封装/外壳:24-TFSOP(0.173",4.40mm 宽)
- 供应商设备封装:24-TVSOP
- 包装:®
- 其它名称:296-9892-6
产品特性
- Designed to be Used in Voltage-Limiting Applications
- 6.5- On-State Connection Between Ports A and B
- Flow-Through Pinout for Ease of Printed Circuit Board Trace Routing
- Direct Interface With GTL+ Levels
- ESD Protection Exceeds JESD 22 2000-V Human-Body Model (A114-A) 1000-V Charged-Device Model (C101)
- 2000-V Human-Body Model (A114-A)
- 1000-V Charged-Device Model (C101)
产品概述
The SN74TVC3010 provides 11 parallel NMOS pass transistors with a common gate. The low on-state resistance of the switch allows connections to be made with minimal propagation delay.The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor. The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor. This is done to protect components with inputs that are sensitive to high-state voltage-level overshoots. (See Application Information in this data sheet.)All of the transistors in the TVC array have the same electrical characteristics; therefore, any one of them can be used as the reference transistor. Since, within the device, the characteristics from transistor to transistor are equal, the maximum output high-state voltage (VOH) is approximately the reference voltage (VREF), with minimal deviation from one output to another. This is a large benefit of the TVC solution over discrete devices. Because the fabrication of the transistors is symmetrical, either port connection of each bit can be used as the low-voltage side, and the I/O signals are bidirectional through each FET.