SN74LVC2G38DCUR 供应商
-
SN74LVC2G38DCUR
品牌：TI 封装/批号：原厂原装/22+ -
SN74LVC2G38DCUR
品牌：TI 封装/批号：8US8/2019+ -
SN74LVC2G38DCUR
品牌：TI 封装/批号：/04+ -
SN74LVC2G38DCUR
品牌：TI 封装/批号：TSSOP/23+
SN74LVC2G38DCUR 属性参数
- 标准包装：1
- 类别：集成电路 (IC)
- 家庭：逻辑 - 栅极和逆变器
- 系列：74LVC
- 逻辑类型：与非门
- 电路数：2
- 输入数：2
- 特点：开路漏极
- 电源电压：1.65 V ~ 5.5 V
- 电流 - 静态（最大值）：10µA
- 输出电流高，低：-，32mA
- 逻辑电平 - 低：0.7 V ~ 0.8 V
- 逻辑电平 - 高：1.7 V ~ 2 V
- 额定电压和最大 CL 时的最大传播延迟：3.9ns @ 5V，50pF
- 工作温度：-40°C ~ 85°C
- 安装类型：表面贴装
- 供应商设备封装：US8
- 封装/外壳：8-VFSOP（0.091"，2.30mm 宽）
- 包装：®
- 其它名称：296-18808-6
产品特性
- Available in the Texas Instruments NanoFree Package
- Supports 5-V VCC Operation
- Inputs Accept Voltages to 5.5 V
- Max tpd of 4 ns at 3.3 V
- Low Power Consumption, 10-μA Max ICC
- ±24-mA Output Drive at 3.3 V
- Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C
- Typical VOHV (Output VOH Undershoot) >2 V at VCC = 3.3 V, TA = 25°C
- Ioff Supports Live insertion, Partial-Power-Down Mode Operation and Back Drive Protection
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Protection Exceeds JESD 22 2000-V Human-Body Model (A114-A) 200-V Machine Model (A115-A) 1000-V Charged-Device Model (C101)
- 2000-V Human-Body Model (A114-A)
- 200-V Machine Model (A115-A)
- 1000-V Charged-Device Model (C101)
产品概述
The SN74LVC2G38 is designed for 1.65-V to 5.5-V VCC
operation.This device is a dual two-input NAND buffer gate with open-drain outputs. It performs the
Boolean function Y = A • B or Y = A +
B in positive logic.NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the
die as the package.This device is fully specified for partial-power-down applications using
Ioff. The Ioff circuitry disables the outputs,
preventing damaging current backflow through the device when it is powered down.
SN74LVC2G38DCUR