SN74AUP1G34DBVT 供应商
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SN74AUP1G34DBVT
品牌：TI 封装/批号：原厂原装/22+
SN74AUP1G34DBVT 属性参数
- 制造商：Texas Instruments
- 产品种类：缓冲器和线路驱动器
- 输入线路数量：1
- 输出线路数量：1
- 极性：Non-Inverting
- Supply Voltage - Max：3.6 V
- Supply Voltage - Min：0.8 V
- 最大工作温度：+ 85 C
- 安装风格：SMD/SMT
- 封装 / 箱体：SOT-23-5
- 封装：Reel
- 高电平输出电流：- 4 mA
- 逻辑系列：AUP
- 逻辑类型：CMOS
- 低电平输出电流：4 mA
- 最小工作温度：- 40 C
- 每芯片的通道数量：1
- 传播延迟时间：36.3 ns at 0.8 V
- 工厂包装数量：250
产品特性
- Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch
- Low Static-Power Consumption; ICC = 0.9 μA Max
- Low Dynamic-Power Consumption; Cpd = 4.1 pF Typ at 3.3 V
- Low Input Capacitance; Ci = 1.5 pF Typ
- Low Noise - Overshoot and Undershoot < 10% of VCC
- Ioff Supports Live Insertion, Partial Power Down Mode, and Back Drive Protection
- Input Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at the Input (Vhys = 250 mV Typ at 3.3 V)
- Wide Operating VCC Range of 0.8 V to 3.6 V
- Optimized for 3.3-V Operation
- 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
- tpd = 4.1 ns Max at 3.3 V
- Suitable for Point-to-Point Applications
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22 2000-V Human-Body Model (A114-B, Class II) 1000-V Charged-Device Model (C101)
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
产品概述
This single buffer gate performs the Boolean function Y = A in positive logic.
SN74AUP1G34DBVT