SN74AUP1G07DPWR 供应商
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SN74AUP1G07DPWR
品牌：TI 封装/批号：原厂原装/22+ -
SN74AUP1G07DPWR
品牌：TI(德州仪器) 封装/批号：X2SON-5/2022+ -
SN74AUP1G07DPWR
品牌：TI 封装/批号：/2021+
SN74AUP1G07DPWR 属性参数
- 现有数量：3,000现货
- 价格：1 : ￥3.58000剪切带（CT）3,000 : ￥1.26920卷带（TR）
- 系列：74AUP
- 包装：卷带（TR）剪切带（CT）? 得捷定制卷带
- 产品状态：在售
- 逻辑类型：缓冲器，非反向
- 元件数：1
- 每个元件位数：1
- 输入类型：-
- 输出类型：开路漏极
- 电流 - 输出高、低：-，4mA
- 电压 - 供电：0.8V ~ 3.6V
- 工作温度：-40°C ~ 85°C（TA）
- 安装类型：表面贴装型
- 封装/外壳：4-XFDFN 裸露焊盘
- 供应商器件封装：4-X2SON（0.8x0.8）
产品特性
- Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch
- Low Static-Power Consumption (ICC = 0.9 µA Maximum)
- Low Dynamic-Power Consumption (Cpd = 1 pF Typical at 3.3 V)
- Low Input Capacitance (Ci = 1.5 pF Typical)
- Low Noise – Overshoot and Undershoot <10% of VCC
- Ioff Supports Live Insertion, Partial-Power-Down Mode, and Back-Drive Protection
- Input Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at the Input (Vhys = 250 mV Typ at 3.3 V)
- Wide Operating VCC Range of 0.8 V to 3.6 V
- Optimized for 3.3-V Operation
- 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
- tpd = 3.3 ns Maximum at 3.3 V
- Suitable for Point-to-Point Applications
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22 2000-V Human-Body Model (A114-B, Class II) 1000-V Charged-Device Model (C101)
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
产品概述
The SN74AUP1G07 device is a single buffer gate with open drain output that operates from
0.8 V to
3.6 V.
SN74AUP1G07DPWR