SN74AUP1G02DRY2 供应商
-
SN74AUP1G02DRY2
品牌：TI 封装/批号：原厂原装/22+
SN74AUP1G02DRY2 属性参数
- 现有数量：0现货10,000Factory查看交期
- 价格：5,000 : ￥1.39521卷带（TR）
- 系列：74AUP
- 包装：卷带（TR）剪切带（CT）? 得捷定制卷带
- 产品状态：在售
- 逻辑类型：或非门
- 电路数：1
- 输入数：2
- 特性：-
- 电压 - 供电：0.8V ~ 3.6V
- 电流 - 静态（最大值）：500 nA
- 电流 - 输出高、低：4mA，4mA
- 逻辑电平 - 低：-
- 逻辑电平 - 高：-
- 不同 V、最大 CL 时最大传播延迟：6.4ns @ 3.3V，30pF
- 工作温度：-40°C ~ 85°C
- 安装类型：表面贴装型
- 供应商器件封装：6-SON（1.45x1）
- 封装/外壳：6-UFDFN
产品特性
- Available in the Ultra Small 0.64 mm2 Package (DPW) with 0.5-mm Pitch
- Low Static-Power Consumption (ICC = 0.9 µA Max)
- Low Dynamic-Power Consumption (Cpd = 4.3 pF Typ at 3.3 V)
- Low Input Capacitance (Ci = 1.5 pF Typ)
- Low Noise – Overshoot and Undershoot <10% of VCC
- Ioff Supports Live Insertion, Partial-Power-Down Mode, and Back-Drive Protection
- Input Hysteresis Allows Slow Input Transition and Better Switching-Noise Immunity at the Input (Vhys = 250 mV Typ at 3.3 V)
- Wide Operating VCC Range of 0.8 V to 3.6 V
- Optimized for 3.3-V Operation
- 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
- tpd = 4.6 ns Max at 3.3 V
- Suitable for Point-to-Point Applications
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22 2000-V Human-Body Model (A114-B, Class II) 1000-V Charged-Device Model (C101)
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
产品概述
This single 2-input positive-NOR gate performs the Boolean function Y =
A + B or Y = A ×
B in positive logic.
SN74AUP1G02DRY2 电路图
