OPA659IDRBT 供应商
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OPA659IDRBT
品牌：TI 封装/批号：原厂原装/22+ -
OPA659IDRBT
品牌：TI(德州仪器) 封装/批号：SON-8/2022+
OPA659IDRBT 属性参数
- 标准包装：1
- 类别：集成电路 (IC)
- 家庭：Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
- 系列：-
- 放大器类型：J-FET
- 电路数：1
- 输出类型：-
- 转换速率：2550 V/µs
- 增益带宽积：350MHz
- -3db带宽：650MHz
- 电流 - 输入偏压：10pA
- 电压 - 输入偏移：1000µV
- 电流 - 电源：32mA
- 电流 - 输出 / 通道：70mA
- 电压 - 电源，单路/双路(±)：±3.5 V ~ 6.5 V
- 工作温度：-40°C ~ 85°C
- 安装类型：表面贴装
- 封装/外壳：8-VDFN 裸露焊盘
- 供应商设备封装：8-SON 裸露焊盘（3x3）
- 包装：®
- 其它名称：296-24074-6
产品特性
- High Bandwidth: 650 MHz (G = 1 V/V)
- High Slew Rate: 2550 V/µs (4-V Step)
- Excellent THD: –78 dBc at 10 MHz
- Low Input Voltage Noise: 8.9 nV/√Hz
- Fast Overdrive Recovery: 8 ns
- Fast Settling time (1% 4-V Step): 8 ns
- Low Input Offset Voltage: ±1 mV
- Low Input Bias Current: ±10 pA
- High Output Current: 70 mA
产品概述
The OPA659 combines a very wideband, unity-gain stable, voltage-feedback operational
amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance
buffering in data acquisition applications such as oscilloscope front-end amplifiers and machine
vision applications such as photodiode transimpedance amplifiers used in wafer
inspection.The wide 650-MHz unity-gain bandwidth is complemented by a very high 2550-V/µs slew
rate.The high input impedance and low bias current provided by the JFET input are supported by
the low 8.9-nV/&radic:Hz input voltage noise to achieve a very low integrated
noise in wideband photodiode transimpedance applications.Broad transimpedance bandwidths are possible with the high 350-MHz gain bandwidth product
of this device.Where lower speed with lower quiescent current is required, consider the
OPA656.
Where unity-gain stability is not required, consider the
OPA657.
OPA659IDRBT 数据手册
OPA659IDRBT
OPA659IDRBT 电路图
