LPC660AIM/NOPB 供应商
-
LPC660AIM/NOPB
品牌：TI 封装/批号：原厂原装/22+ -
LPC660AIM/NOPB
品牌：TI(德州仪器) 封装/批号：SOIC-14/2022+ -
LPC660AIM/NOPB
品牌：TI/德州仪器 封装/批号：/21+
LPC660AIM/NOPB 属性参数
- 制造商：National Semiconductor (TI)
- 通道数量：4
- 共模抑制比（最小值）：70 dB
- 输入补偿电压：3 mV at 5 V
- 工作电源电压：9 V, 12 V
- 安装风格：SMD/SMT
- 封装 / 箱体：SOIC-14 Narrow
- 转换速度：0.07 V/us at 5 V
- 关闭：No
- 最大工作温度：+ 85 C
- 封装：Tube
- 最小工作温度：- 40 C
- 工厂包装数量：55
- 电源电流：0.2 mA at 5 V
- Supply Voltage - Max：15 V
- Supply Voltage - Min：5 V
- 技术：CMOS
- 电压增益 dB：120 dB
产品特性
- Rail-to-rail output swing
- Micropower operation: (1 mW)
- Specified for 100 kΩ and 5 kΩ loads
- High voltage gain: 120 dB
- Low input offset voltage: 3 mV
- Low offset voltage drift: 1.3 μV/°C
- Ultra low input bias current: 2 fA
- Input common-mode includes V−
- Operation range from +5V to +15V
- Low distortion: 0.01% at 1 kHz
- Slew rate: 0.11 V/μs
- Full military temp. range available
产品概述
The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply.
It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output
swing in addition to an input common-mode range that includes ground. Performance limitations that
have plagued CMOS amplifiers in the past are not a problem with this design. Input
VOS, drift, and broadband noise as well as voltage gain (into 100 kΩ and 5
kΩ) are all equal to or better than widely accepted bipolar equivalents, while the power supply
requirement is typically less than 1 mW.This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.See the LPC662 datasheet for a Dual CMOS operational amplifier and LPC661 datasheet for a
single CMOS operational amplifier with these same features.
LPC660AIM/NOPB 数据手册
LPC660AIM/NOPB
LPC660AIM/NOPB 电路图
