LM5111-2MY/NOPB 供应商
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LM5111-2MY/NOPB
品牌：TI 封装/批号：原厂原装/22+ -
LM5111-2MY/NOPB
品牌：TI(德州仪器) 封装/批号：HVSSOP-8/2022+
LM5111-2MY/NOPB 属性参数
- 制造商：National Semiconductor (TI)
- 类型：Low Side
- 上升时间：25 ns
- 下降时间：25 ns
- Supply Voltage - Max：14 V
- Supply Voltage - Min：3.5 V
- 电源电流：2 mA
- 最大工作温度：+ 125 C
- 安装风格：SMD/SMT
- 封装 / 箱体：MSOP
- 封装：Reel
- 配置：Inverting
- 最小工作温度：- 40 C
- 激励器数量：2
- 输出端数量：2
- 输出电流：5 A (Typ)
- 工厂包装数量：1000
产品特性
- Independently Drives Two N-Channel MOSFETs
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 5-A Sink and 3-A Source Current Capability
- Two Channels can be Connected in Parallel to Double the Drive Current
- Independent Inputs (TTL Compatible)
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns and 12 ns Rise and Fall, Respectively, With 2-nF Load)
- Available in Dual Noninverting, Dual Inverting and Combination Configurations
- Supply Rail Undervoltage Lockout Protection (UVLO)ƒ
- LM5111-4 UVLO Configured to Drive PFET through OUT_A and NFET through OUT_B
- Pin Compatible With Industry Standard Gate Drivers
产品概述
The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak
output current and efficiency. Each compound output driver stage
includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak
from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature. Undervoltage lockout protection is also
provided. The drivers can be operated in parallel with inputs and outputs connected to double the
drive current capability. This device is available in the SOIC package or the thermally enhanced
MSOP-PowerPAD package.
LM5111-2MY/NOPB 数据手册
LM5111-2MY/NOPB
LM5111-2MY/NOPB 电路图
