LM5104SD/NOPB 供应商
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LM5104SD/NOPB
品牌：TI 封装/批号：原厂原装/22+ -
LM5104SD/NOPB
品牌：NSC/ELNAF 封装/批号：10-LLP/1810+
LM5104SD/NOPB 属性参数
- 制造商：National Semiconductor (TI)
- 类型：High and Low Side
- 上升时间：600 ns (Typ)
- 下降时间：600 ns (Typ)
- Supply Voltage - Max：14 V
- Supply Voltage - Min：9 V
- 电源电流：3 mA
- 最大工作温度：+ 125 C
- 安装风格：SMD/SMT
- 封装 / 箱体：LLP EP
- 封装：Reel
- 配置：Inverting, Non-Inverting
- 最小工作温度：- 40 C
- 激励器数量：2
- 输出端数量：2
- 输出电流：1.8 A (Typ)
- 工厂包装数量：1000
产品特性
- Drives Both a High-Side and Low-Side N-Channel MOSFET
- Adaptive Rising and Falling Edges With Programmable Additional Delay
- Single Input Control
- Bootstrap Supply Voltage Range up to 118-V DC
- Fast Turnoff Propagation Delay (25 ns Typical)
- Drives 1000-pF Loads With 15-ns Rise and Fall Times
- Supply Rail Undervoltage Lockout
- SOIC and WSON-10 4-mm × 4-mm Package
产品概述
The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the
low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can
work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from
a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through
issues. In addition to the adaptive transition timing, an additional delay time can be added,
proportional to an external setting resistor. An integrated high-voltage diode is provided to
charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed
while consuming low power and providing clean level transitions from the control logic to the
high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side
power rails. This device is available in the standard SOIC and the WSON packages.
LM5104SD/NOPB 数据手册
LM5104SD/NOPB
LM5104SD/NOPB 电路图
