LF442AMH 供应商
LF442AMH 属性参数
- 制造商：National Semiconductor (TI)
- 通道数量：2
- 共模抑制比（最小值）：80 dB
- 输入补偿电压：1 mV at +/- 20 V
- 安装风格：Through Hole
- 封装 / 箱体：TO-99
- 转换速度：1 V/us at +/- 15 V
- 关闭：No
- 最大工作温度：+ 125 C
- 封装：Bulk
- 最小工作温度：- 55 C
- 工厂包装数量：500
- 电源电流：0.4 mA at +/- 20 V
- 技术：BiFET
- 电压增益 dB：106.02 dB
产品特性
- 1/10 Supply Current of a LM1458: 400 µA (Max)
- Low Input Bias Current: 50 pA (Max)
- Low Input Offset Voltage: 1 mV (Max)
- Low Input Offset Voltage Drift: 7 µV/°C (Typ)
- High Gain Bandwidth: 1 MHz
- High Slew Rate: 1 V/µs
- Low Noise Voltage for Low Power: 35 nV/√Hz
- Low Input Noise Current: 0.01 pA/√Hz
- High Input Impedance: 1012Ω
- High Gain VO = ±10V, RL = 10k: 50k (Min)
产品概述
The LF442-MIL dual low power operational amplifiers provide many of the same AC
characteristics as the industry standard LM1458 while greatly improving the DC characteristics of
the LM1458. The amplifiers have the same bandwidth, slew rate, and gain (10 kΩ load) as the LM1458
and only draw one tenth the supply current of the LM1458. In addition the well matched high voltage
JFET input devices of the LF442-MIL reduce the input bias and offset currents by a factor of 10,000
over the LM1458. A combination of careful layout design and internal trimming ensures very low
input offset voltage and voltage drift. The LF442-MIL also has a very low equivalent input noise
voltage for a low power amplifier.The LF442-MIL is pin compatible with the LM1458 allowing an immediate 10 times reduction
in power drain in many applications. The LF442-MIL should be used where low power dissipation and
good electrical characteristics are the major considerations.
LF442AMH 数据手册
LF442AMH
LF442AMH 电路图
