IC元器件

LF356M

参考价格：￥2.10-￥2.68

Texas Instruments 放大器 IC

LF356M 供应商

LF356M 属性参数

  • 制造商：National Semiconductor (TI)
  • 通道数量：1
  • 共模抑制比（最小值）：80 dB
  • 输入补偿电压：10 mV at +/- 15 V
  • 安装风格：SMD/SMT
  • 封装 / 箱体：SOIC-8 Narrow
  • 转换速度：12 V/us at +/- 15 V
  • 关闭：No
  • 最大工作温度：+ 70 C
  • 封装：Tube
  • 最小工作温度：0 C
  • 工厂包装数量：95
  • 电源电流：10 mA at +/- 15 V
  • 技术：BiFET
  • 电压增益 dB：106.02 dB

产品特性

  • Advantages Replace Expensive Hybrid and Module FET Op Amps Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices Excellent for Low Noise Applications Using Either High or Low Source Impedance–Very Low 1/f Corner Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems Internal Compensation and Large Differential Input Voltage Capability
  • Replace Expensive Hybrid and Module FET Op Amps
  • Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices
  • Excellent for Low Noise Applications Using Either High or Low Source Impedance–Very Low 1/f Corner
  • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
  • New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
  • Internal Compensation and Large Differential Input Voltage Capability
  • Common Features Low Input Bias Current: 30 pA Low Input Offset Current: 3 pA High Input Impedance: 1012 Ω Low Input Noise Current: 0.01 pA/√Hz High Common-Mode Rejection Ratio: 100 dB Large DC Voltage Gain: 106 dB
  • Low Input Bias Current: 30 pA
  • Low Input Offset Current: 3 pA
  • High Input Impedance: 1012 Ω
  • Low Input Noise Current: 0.01 pA/√Hz
  • High Common-Mode Rejection Ratio: 100 dB
  • Large DC Voltage Gain: 106 dB
  • Uncommon Features Extremely Fast Settling Time to 0.01%: 4 µs for the LFx55 devices 1.5 µs for the LFx56 1.5 µs for the LFx57 (AV = 5) Fast Slew Rate: 5 V/µs for the LFx55 12 V/µs for the LFx56 50 V/µs for the LFx57 (AV = 5) Wide Gain Bandwidth: 2.5 MHz for the LFx55 devices 5 MHz for the LFx56 20 MHz for the LFx57 (AV = 5) Low Input Noise Voltage: 20 nV/√Hz for the LFx55 12 nV/√Hz for the LFx56 12 nV/√Hz for the LFx57 (AV = 5)
  • Extremely Fast Settling Time to 0.01%: 4 µs for the LFx55 devices 1.5 µs for the LFx56 1.5 µs for the LFx57 (AV = 5)
  • 4 µs for the LFx55 devices
  • 1.5 µs for the LFx56
  • 1.5 µs for the LFx57 (AV = 5)
  • Fast Slew Rate: 5 V/µs for the LFx55 12 V/µs for the LFx56 50 V/µs for the LFx57 (AV = 5)
  • 5 V/µs for the LFx55
  • 12 V/µs for the LFx56
  • 50 V/µs for the LFx57 (AV = 5)
  • Wide Gain Bandwidth: 2.5 MHz for the LFx55 devices 5 MHz for the LFx56 20 MHz for the LFx57 (AV = 5)
  • 2.5 MHz for the LFx55 devices
  • 5 MHz for the LFx56
  • 20 MHz for the LFx57 (AV = 5)
  • Low Input Noise Voltage: 20 nV/√Hz for the LFx55 12 nV/√Hz for the LFx56 12 nV/√Hz for the LFx57 (AV = 5)
  • 20 nV/√Hz for the LFx55
  • 12 nV/√Hz for the LFx56
  • 12 nV/√Hz for the LFx57 (AV = 5)

产品概述

The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
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