L293NEE4 供应商
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									L293NEE4品牌:TI 封装/批号:原厂原装/2318+
L293NEE4 属性参数
- 标准包装:25
- 类别:集成电路 (IC)
- 家庭:PMIC - MOSFET,电桥驱动器 - 内部开关
- 系列:-
- 类型:半桥
- 输入类型:非反相
- 输出数:4
- 导通状态电阻:-
- 电流 - 输出 / 通道:1A
- 电流 - 峰值输出:2A
- 电源电压:4.5 V ~ 36 V
- 工作温度:0°C ~ 70°C
- 安装类型:通孔
- 封装/外壳:16-DIP(0.300",7.62mm)
- 供应商设备封装:16-PDIP
- 包装:管件
产品特性
- Wide Supply-Voltage Range: 4.5 V to 36 V
- Separate Input-Logic Supply
- Internal ESD Protection
- High-Noise-Immunity Inputs
- Output Current 1 A Per Channel (600 mA for L293D)
- Peak Output Current 2 A Per Channel (1.2 A for L293D)
- Output Clamp Diodes for Inductive Transient Suppression (L293D)
产品概述
												The L293 and L293D devices are quadruple high-current half-H drivers. The L293 is
 		designed to provide bidirectional drive currents of up to 1 A at voltages from 4.5 V to 36 V. The
 		L293D is designed to provide bidirectional drive currents of up to 600-mA at voltages from 4.5 V to
 		36 V. Both devices are designed to drive inductive loads such as relays, solenoids, DC and bipolar
 		stepping motors, as well as other high-current/high-voltage loads in positive-supply
 		applications.Each output is a complete totem-pole drive circuit, with a Darlington transistor sink and
 		a pseudo- Darlington source. Drivers are enabled in pairs, with drivers 1 and 2 enabled by 1,2EN
 		and drivers 3 and 4 enabled by 3,4EN.The L293 and L293D are characterized for operation from 0°C to 70°C.
											
											
										L293NEE4 电路图
 
							 
		 L293NEE4
L293NEE4