74CBTD3384CDGVRE4 供应商
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74CBTD3384CDGVRE4
品牌:TI 封装/批号:原厂原装/22+
74CBTD3384CDGVRE4 属性参数
- 标准包装:2,000
- 类别:集成电路 (IC)
- 家庭:逻辑 - 信号开关,多路复用器,解码器
- 系列:74CBTD
- 类型:FET 总线开关
- 电路:5 x 1:1
- 独立电路:2
- 输出电流高,低:15mA,64mA
- 电压电源:单电源
- 电源电压:4.5 V ~ 5.5 V
- 工作温度:-40°C ~ 85°C
- 安装类型:表面贴装
- 封装/外壳:24-TFSOP(0.173",4.40mm 宽)
- 供应商设备封装:24-TVSOP
- 包装:带卷 (TR)
产品特性
- Undershoot Protection for Off-Isolation on A and B Ports Up To 2 V
- Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
- Bidirectional Data Flow, With Near-Zero Propagation Delay
- Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
- Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- VCC Operating Range From 4.5 V to 5.5 V
- Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
- Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22 2000-V Human-Body Model (A114-B, Class II) 1000-V Charged-Device Model (C101)
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Supports Both Digital and Analog Applications: Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
产品概述
The SN74CBTD3384C is a high-speed TTL-compatible FET bus switch with low ON-state resistance, allowing for minimal propagation delay. This device features an integrated diode to VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3384C provides protection for undershoot down to 2 V by sensing an undershoot event and ensuring that the switch remains in the proper state.The SN74CBTD3384C is organized as two 5-bit bus switches with separate output-enable (OE)\ inputs. It can be used as two 5-bit bus switches or as one 10-bit bus switch. When OE\ is low, the associated 5-bit bus switch is ON, and port A is connected to port B. When OE\ is high, the associated 5-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.